Publications

2025

1. Marcella, N., Shimogawa, R., Xiang, Y., Frenkel, A.I.
   First shell EXAFS data analysis of nanocatalysts via neural networks
   J. Catal. 447, 116145 (2025) https://doi.org/10.1016/j.jcat.2025.116145
2. Cheng, Q., Chen, Z., Hu, S., Raghothamachar, B. & Dudley, M.
   Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation.
   J. Electron. Mater. (2025).
   https://doi.org/10.1007/s11664-025-11793-y
3. Hu, S., Chen, Z., Raghothamachar, B. & Dudley, M.
   Frank Dislocations Generation and Behavior Investigation in PVT-Grown 4H-SiC Crystals.
   J. Electron. Mater. (2025).
   https://doi.org/10.1007/s11664-024-11697-3
4. Hu, S., Chen, Z., Cheng, Q., Raghothamachar, B. & Dudley, M.
   Nucleation of Dislocations from Scratches on the Surface of PVT-Grown 4H-SiC Wafers.
   J. Electron. Mater. (2025).
   https://doi.org/10.1007/s11664-025-11743-8

2024

4. Chen, Z., Liu, Y., Cheng, Q., Hu, S., Raghothamachar, B. & Dudley, M.
   Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography.
   J. Cryst. Growth 627, 127535 (2024).
5. Hu, S., Liu, Y., Cheng, Q., Chen, Z., Tong, X., Raghothamachar, B. & Dudley, M.
   Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals.
   J. Cryst. Growth 628, 127542 (2024).
6. Kim, J., Liu, Y., Raghothamachar, B., Dudley, M. & Kwon, J.W.
   Defect-curing effects of fast neutrons on n-type GaN.
   Mater. Chem. Phys. 315, 128934 (2024).
7. Fang, J., Hurley, N., Chien, C.T., Guo, A., Khan, T.A., Li, M., Cotlet, M., Moretti, F., Bourret, E., Shifman, S., Tsirka, S.E., Shelly, M. & Wong, S.S.
   Probing the optical properties and toxicological profile of zinc tungstate nanorods.
   J. Chem. Phys. 160, 234701 (2024).
8. Cheng, Q., Chen, Z., Hu, S., Liu, Y., Raghothamachar, B. & Dudley, M.
   Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations.
   Mater. Sci. Semicond. Process. 174, 108207 (2024).

2022

9. Mancini, S.A., Jang, S.Y., Chen, Z., Kim, D., Lynch, J., Liu, Y., Raghothamachar, B., Kang, M., Agarwal, A., Mahadik, N., Stahlbush, R., Dudley, M. & Sung, W.
   Static Performance and Reliability of 4H-SiC Diodes with P plus Regions Formed by Various Profiles and Temperatures.
   IEEE Int. Reliab. Phys. Symp. (2022).
10. Hu, S., Fang, H., Liu, Y., Peng, H., Cheng, Q., Chen, Z., Dalmau, R., Britt, J., Schlesser, R., Raghothamachar, B. & Dudley, M.
    Characterization of prismatic slip in PVT-grown AlN crystals.
    J. Cryst. Growth 584, 126548 (2022).
11. Liu, Y., Chen, Z., Hu, S., Peng, H., Cheng, Q., Raghothamachar, B. & Dudley, M.
    Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography.
    J. Cryst. Growth 583, 126559 (2022).
12. Peng, H., Chen, Z., Liu, Y., Raghothamachar, B., Huang, X., Assoufid, L. & Dudley, M.
    Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution.
    J. Appl. Crystallogr. 55, 544-550 (2022).
13. Chen, Z., Liu, Y., Peng, H., Cheng, Q., Hu, S., Raghothamachar, B., Dudley, M., Ghandi, R., Kennerly, S. & Thieberger, P.
    Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode.
    ECS J. Solid State Sci. Technol. 11, 065003 (2022).

2021

14. Cheng, Q., Ailihumaer, T., Liu, Y., Peng, H., Chen, Z., Raghothamachar, B. & Dudley, M.
    Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations.
    J. Electron. Mater. 50, 4104-4117 (2021).
15. McGuire, S.C., Ebrahim, A.M., Hurley, N., Zhang, L., Frenkel, A.I. & Wong, S.S.
    Reconciling structure prediction of alloyed, ultrathin nanowires with spectroscopy.
    Chem. Sci. 12, 7158-7173 (2021).
16. Hurley, N., McGuire, S.C. & Wong, S.S.
    Assessing the Catalytic Behavior of Platinum Group Metal-Based Ultrathin Nanowires Using X-ray Absorption Spectroscopy.
    ACS Appl. Mater. Interfaces 13, 58253-58260 (2021).
17. Hurley, N., Li, L., Koenigsmann, C. & Wong, S.S.
    Surfactant-Free Synthesis of Three-Dimensional Perovskite Titania-Based Micron-Scale Motifs Used as Catalytic Supports for the Methanol Oxidation Reaction.
    Molecules 26, 909 (2021).
18. Chakoumakos, B.C. & Parise, J.B.
    Probing Phase Transitions and Magnetism in Minerals with Neutrons.
    Elements 17, 181-188 (2021).
19. Ailihumaer, T., Peng, H., Fujie, F., Raghothamachar, B., Dudley, M., Harada, S. & Ujihara, T.
    Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals.
    Mater. Sci. Eng. B 271, 115281 (2021).
20. Liu, Y., Raghothamachar, B., Peng, H., Ailihumaer, T. & Dudley, M.
    X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices.
    J. Electron. Mater. 50, 2981-2989 (2021).
21. Liu, Y., Peng, H., Chen, Z., Ailihuamaer, T., Hu, S., Raghothamachar, B. & Dudley, M.
    Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices.
    MRS Adv. 6, 450-455 (2021).
22. Ailihumaer, T., Peng, H., Liu, Y., Raghothamachar, B., Dudley, M., Chung, G., Manning, I. & Sanchez, E.
    Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals.
    J. Electron. Mater. 50, 3258-3265 (2021).
23. Peng, H., Ailihumaer, T., Liu, Y., Kisslinger, K., Tong, X., Raghothamachar, B. & Dudley, M.
    Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy.
    J. Electron. Mater. 50, 3006-3012 (2021).

2020

24. Peng, H., Ailihumaer, T., Raghothamachar, B. & Dudley, M.
    Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers.
    J. Electron. Mater. 49, 3472-3480 (2020).
25. Peng, H., Ailihumaer, T., Liu, Y., Raghothamachar, B. & Dudley, M.
    Characterization of defects and strain in the (AlxGa(1-x))0.5In0.5P/GaAs system by synchrotron X-ray topography.
    J. Cryst. Growth 533, 125458 (2020).
26. Raghothamachar, B., Liu, Y., Peng, H., Ailihumaer, T., Dudley, M., Shahedipour-Sandvik, F.S., Jones, K.A., Armstrong, A., Allerman, A.A., Han, J., Fu, H., Fu, K. & Zhao, Y.
    X-ray topography characterization of gallium nitride substrates for power device development.
    J. Cryst. Growth 544, 125709 (2020).
27. Liu, Y., Raghothamachar, B., Peng, H., Ailihumaer, T., Dudley, M., Collazo, R., Tweedie, J., Sitar, Z., Shahedipour-Sandvik, F.S., Jones, K.A., Armstrong, A., Allerman, A.A., Grabianska, K., Kucharski, R. & Bockowski, M.
    Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates.
    J. Cryst. Growth 551, 125903 (2020).

2019

28. Ailihumaer, T., Yang, Y., Guo, J., Raghothamachar, B. & Dudley, M.
    Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals.
    J. Electron. Mater. 48, 3363-3369 (2019).
29. Parise, J.B., Xia, B., Simonson, J.W., Woerner, W.R., Plonka, A.M., Phillips, B.L. & Ehm, L.
    Structural Chemistry of Akdalaite, Al10O14(OH)2, the Isostructural Aluminum Analogue of Ferrihydrite.
    Crystals 9, 246 (2019).

2018

30. Wilson, M., Ribeiro, M.C.C., Wilding, M.C., Benmore, C., Weber, J.K.R., Alderman, O., Tamalonis, A. & Parise, J.B.
    Structure and Liquid Fragility in Sodium Carbonate.
    J. Phys. Chem. A 122, 1071-1076 (2018).
31. Guo, J., Yang, Y., Raghothamachar, B., Dudley, M. & Stoupin, S.
    Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography.
    J. Electron. Mater. 47, 903-909 (2018).
32. Yang, Y., Guo, J., Goue, O.Y., Kim, J.G., Raghothamachar, B., Dudley, M., Chung, G., Sanchez, E. & Manning, I.
    Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers.
    J. Electron. Mater. 47, 1218-1222 (2018).
33. Jose, B.M., Nandyala, D., Cubaud, T. & Colosqui, C.E.
    Physical ageing of spreading droplets in a viscous ambient phase.
    Sci. Rep. 8, 14159 (2018).
34. Lobanov, S.S., Daly, J.A., Goncharov, A.F., Chan, X., Ghose, S.K., Zhong, H., Ehm, L., Kim, T. & Parise, J.B.
    Iodine in Metal-Organic Frameworks at High Pressure.
    J. Phys. Chem. A 122, 6109-6117 (2018).
35. Guo, J., Ailihumaer, T., Peng, H., Raghothamachar, B. & Dudley, M.
    In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers.
    ECS Trans. 86, 75-82 (2018).
36. Ailihumaer, T., Yang, Y., Guo, J., Raghothamachar, B. & Dudley, M.
    Evaluation of Model for Determining Nitrogen Doping Concentration from Resultant Strain in Heavily Doped 4H-SiC Crystals.
    ECS Trans. 86, 53-61 (2018).

2017

37. Guo, J., Yang, Y., Raghothamachar, B. & Dudley, M.
    Estimation of lattice strain in 4H-SiC commercial wafer by Synchrotron Monochromatic X-ray topographic contour mapping.
    ECS Trans. 80, 245-250 (2017).

2016

38. Sen, M., Jiang, N., Cheung, J., Endoh, M.K., Koge, T., Kawaguchi, D. & Tanaka, K.
    Flattening Process of Polymer Chains Irreversibly Adsorbed on a Solid.
    ACS Macro Lett. 5, 504-508 (2016).