64th Electronic Materials Conference
- Investigation of the Area Defects in Gallium Nitride Substrate Wafers
Yafei Liu, Qianyu Cheng, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley
- Dislocation contrast analysis in synchrotron X-ray topography
Hongyu Peng, Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar and Michael Dudley
- Analysis of Strain Gradient in High Energy Implanted 4H-SiC Epi Wafer by Synchrotron X-Ray Rocking Curve Topography
Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger
- Determination of Effective Penetration Depths on Synchrotron X-Ray Topographic Images of Dislocations Lying on the Basal Plane in 4H-SiC Crystals
Qianyu Cheng, Hongyu Peng, Shanshan Hu, Zeyu Chen, Yafei Liu, Balaji Raghothamachar, Michael Dudley
- Investigation of the Area Defects in Gallium Nitride Substrate Wafers
Yafei Liu, Qianyu Cheng, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley
- Strain Analysis of High Energy Implanted 4H-SiC Epiwafer By Synchrotron X-Ray Plane Wave Topography
Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger
- Quantitative Analysis of Dislocations in 4H-SiC Wafers Using Synchrotron X-Ray Topography with Ultra-High Angular Resolution
Hongyu Peng, Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar and Michael Dudley
- Effective Penetration Depths Investigation on Synchrotron X-Ray Topographic Images of Dislocations Lying on the Basal Plane in 4H-SiC Crystals through Ray-Tracing Simulation
Qianyu Cheng, Hongyu Peng, Shanshan Hu, Zeyu Chen, Yafei Liu, Balaji Raghothamachar, Michael Dudley
19th International Conference on Silicon Carbide and Related Materials 2022
- Investigation of defect generation and propagation in electrically and photonically stressed Silicon Carbide
Hongyu Peng, Yafei Liu, Zeyu CHen, Qianyu Cheng, Shanshan Hu, James Watson, Stephen Sampayan, Balaji Raghothamachar, and Michael Dudley
- Characterization of Prismatic Slip in SiC Cyrstals by Chemical Etching Method
Shanshan Hu, Shuai Fang, Yafei Liu, Qianyu Cheng, Hongyu Peng, Zeyu Chen, Yuhan Gao, Chao Gao, Balaji Raghothamachar, and Michael Dudley
- Step structure manipulation and impact on dislocation interactions and crystal quality during the early stages of PVT growth of 4H-SiC crystals
Shanshan Hu, Yafei Liu, Hongyu Peng, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, D. Hansen, D. Dukes, L. Young, S. Griswold, H. Briccetti
- Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-ray Topography
Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger
- Analysis of Basal Plane Dislocation Motion Induced by P+ Ion Implantation Using Synchrotron X-ray Topography
Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, Michael Dudley, Stephen A. Mancini, Seung Yup Jang, and Woongje Sung
- Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-ray Topographs of 4H-SiC Wafers
Qianyu Cheng, Hongyu Peng, Zeyu Chen, Shanshan Hu, Yafei Liu, Balaji Raghothamachar, Michael Dudley
- Interpretation of dislocation images in synchrotron X-ray topography using ray-tracing simulations
Hongyu Peng, Balaji Raghothamachar, Michael Dudley
2022 Research Day – Department of Materials Science and Chemical Engineering at Stony Brook University
- Synchrotron X-ray topography characterization of power electronic GaN materials
Yafei Liu, Hongyu Peng, Zeyu Chen, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley
- SiC Defect Investigation on Synchrotron X-Ray Topographs through Ray-tracing Simulation Incorporating the Effect of Surface Relaxation and Photoelectric Absorption and its Application in Effective Penetration Depth Study
Qianyu Cheng, Shanshan Hu, Yafei Liu, Zeyu Chen, Balaji Raghothamachar, Michael Dudley
- Synchrotron Rocking Curve X-ray Topography Characterization of High Energy Implanted 4H-SiC Lattice Damage
Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger