65^th Electronic Materials Conference (EMC)

• Ray Tracing Simulation of Defects of 4H-SiC in 22-4 16 Reflection of Synchrotron monochromatic Beam X-Ray Topography in Grazing Incident Geometry

Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar Reza Ghandi, Stacey Kennerly and Michael Dudley

• Analysis of Distribution of Threading Edge Dislocation Low Angle Grain Boundaries in 4H-SiC Wafers through Synchrotron X-Ray Topography

Qianyu Cheng, Yafei Liu, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar and Michael Dudley

• Investigation of Defect Formation During Initial Stage of PVT-Grown 4H-SiC Crystals

Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar and Michael Dudley

• Characterization of Growth Sectors in Patterned HVPE Gallium Nitride Substrate Wafers

Yafei Liu, Shanshan Hu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar and Michael Dudley

243^rd ECS Meeting

• (Invited) Application of Synchrotron X-Ray Topography Techniques to the Analysis of Defect Microstructures in Bulk GaN Substrates and Epilayers for Power Devices

Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael Dudley

ICSCRM 2023

• Mechanism of Stacking Fault multiplication 4H-SiC Epitaxial Layers via an Interaction with
  Screw and Mixed Dislocations

Nadeemullah Mahadik, Michael Dudley, Balaji Raghothamachar, Zeyu Chen, Robert
Stahlbush, Miguel Hinojosa, Aivars Lelis and Woongje Sung

• Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth using Synchrotron X-Ray Topography

Qianyu Cheng, Yafei Liu, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar, Michael Dudley,
Vladimir Pushkarev, Kevin Moeggenborg, Gil Chung and Edward Sanchez

• Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, Reza Ghandi,
Stacey Kennerly, Charles Carlson, Dannie Steski and Michael Dudley

• Analysis of Defect Structures During the Early Stages of PVT Growth of 4H-SiC Crystals

Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley, Douglas Dukes, Victor Torres, Liam Young, Sam Griswold and Hunter Briccetti

• Characterization of Growth Sectors in Gallium Nitride Substrate Wafers

Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar and Michael
Dudley

• Investigation of dislocation behaviors in 4H-SiC under thermal treatment

Hongyu Peng, Yuhan Gao, Shuchun Zhao, Chao Gao, Zeyu Chen, Balaji Raghothamachar
and Michael Dudley

244^th ECS Meetings

• Synchrotron X-Ray Topography Studies for Defect Formation at the Early Stage of PVT-Grown 4H-SiC Crystals

Shanshan Hu, Yafei Liu, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar
and Michael Dudley

• Analysis of Basal Plane Dislocation Motion Induced By P+ Ion Implantation Using Synchrotron X-Ray Topography

Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar
and Michael Dudley

• Investigating the Distribution Pattern of Threading Edge Dislocation Low Angle Grain Boundaries in 4H-SiC Wafers Using Synchrotron X-Ray Topography

Qianyu Cheng, Yafei Liu, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar
and Michael Dudley

• Investigation of Growth Sectors in Gallium Nitride Substrate Wafers from Ammonothermal and Patterned Hvpe Growth Methods

Yafei Liu, Shanshan Hu, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar
and Michael Dudley

64^th Electronic Materials Conference

• Investigation of the Area Defects in Gallium Nitride Substrate Wafers

Yafei Liu,  Qianyu Cheng, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley

• Dislocation contrast analysis in synchrotron X-ray topography

Hongyu Peng, Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar and Michael Dudley

• Analysis of Strain Gradient in High Energy Implanted 4H-SiC Epi Wafer by Synchrotron X-Ray Rocking Curve Topography

Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger 

• Determination of Effective Penetration Depths on Synchrotron X-Ray Topographic Images of Dislocations Lying on the Basal Plane in 4H-SiC Crystals

Qianyu Cheng, Hongyu Peng, Shanshan Hu, Zeyu Chen, Yafei Liu, Balaji Raghothamachar, Michael Dudley

242^nd ECS meeting

• Investigation of the Area Defects in Gallium Nitride Substrate Wafers

Yafei Liu,  Qianyu Cheng, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley

• Strain Analysis of High Energy Implanted 4H-SiC Epiwafer By Synchrotron X-Ray Plane Wave Topography

Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger 

• Quantitative Analysis of Dislocations in 4H-SiC Wafers Using Synchrotron X-Ray Topography with Ultra-High Angular Resolution

Hongyu Peng, Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar and Michael Dudley

• Effective Penetration Depths Investigation on Synchrotron X-Ray Topographic Images of Dislocations Lying on the Basal Plane in 4H-SiC Crystals through Ray-Tracing Simulation   

Qianyu Cheng, Hongyu Peng, Shanshan Hu, Zeyu Chen, Yafei Liu, Balaji Raghothamachar, Michael Dudley

19^th International Conference on Silicon Carbide and Related Materials 2022

• Investigation of defect generation and propagation in electrically and photonically stressed Silicon Carbide

Hongyu Peng, Yafei Liu, Zeyu CHen, Qianyu Cheng, Shanshan Hu, James Watson, Stephen Sampayan, Balaji Raghothamachar, and Michael Dudley

• Characterization of Prismatic Slip in SiC Cyrstals by Chemical Etching Method

Shanshan Hu, Shuai Fang, Yafei Liu, Qianyu Cheng, Hongyu Peng, Zeyu Chen, Yuhan Gao, Chao Gao, Balaji Raghothamachar, and Michael Dudley

• Step structure manipulation and impact on dislocation interactions and crystal quality during the early stages of PVT growth of 4H-SiC crystals

Shanshan Hu, Yafei Liu, Hongyu Peng, Zeyu Chen, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, D. Hansen, D. Dukes, L. Young, S. Griswold, H. Briccetti

• Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-ray Topography

Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger 

• Analysis of Basal Plane Dislocation Motion Induced by P+ Ion Implantation Using Synchrotron X-ray Topography

Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, Michael Dudley, Stephen A. Mancini, Seung Yup Jang, and Woongje Sung

• Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-ray Topographs of 4H-SiC Wafers

Qianyu Cheng, Hongyu Peng, Zeyu Chen, Shanshan Hu, Yafei Liu, Balaji Raghothamachar, Michael Dudley

DRIP XIX

• Interpretation of dislocation images in synchrotron X-ray topography using ray-tracing simulations

Hongyu Peng, Balaji Raghothamachar, Michael Dudley

2022 Research Day – Department of Materials Science and Chemical Engineering at Stony Brook University

• Synchrotron X-ray topography characterization of power electronic GaN materials

Yafei Liu, Hongyu Peng, Zeyu Chen, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley

• SiC Defect Investigation on Synchrotron X-Ray Topographs through Ray-tracing Simulation Incorporating the Effect of Surface Relaxation and Photoelectric Absorption and its Application in Effective Penetration Depth Study

Qianyu Cheng, Shanshan Hu, Yafei Liu, Zeyu Chen, Balaji Raghothamachar, Michael Dudley

• Synchrotron Rocking Curve X-ray Topography Characterization of High Energy Implanted 4H-SiC Lattice Damage

Zeyu Chen, Yafei Liu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley, Reza Ghandi, Stacey Kennerly and Peter Thieberger