2023
- Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
S. Hu, S. Fang, Y. Liu, Q. Cheng, H. Peng, Z. Chen, Y. Gao, C. Gao, B. Raghothamachar, M. Dudley
Materials Science Forum, 1089, 45-50 (2023)
https://doi.org/10.4028/p-6dx2v3 - Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
H. Peng, Y. Liu, Z. Chen, Q. Cheng, S. Hu, J. Watson, K. Sampayan, S. Sampayan, B. Raghothamachar, M. Dudley
Defect and Diffusion Forum, 425, 43-49 (2023)
https://doi.org/10.4028/p-1×9513 - Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
Z. Chen, Y. Liu, H. Peng, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley
Defect and Diffusion Forum, 426, 71-78 (2023)
https://doi.org/10.4028/p-4mo61y - Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
Q. Cheng, H. Peng, Z. Chen, S. Hu, Y. Liu, B. Raghothamachar, M. Dudley
Defect and Diffusion Forum, 426, 57-64 (2023)
https://doi.org/10.4028/p-h6l351 - Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
Z. Chen, Y. Liu, H. Peng, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley
Defect and Diffusion Forum, 426, 51-56 (2023)
https://doi.org/10.4028/p-di3si0 - Application of Synchrotron X-Ray Topography Techniques to the Analysis of Defect Microstructures in Bulk GaN Substrates and Epilayers for Power Devices
Y. Liu, S. Hu, Z. Chen, Q. Cheng, B. Raghothamachar, M. Dudley
ECS Trans. 111(2), 117 (2023)
https://dx.doi.org/10.1149/11102.0117ecst - LauePt4 for rapid recognition and fitting of Laue patterns from crystals with unknown orientations
VW. Huang, Y. Liu, B. Raghothamachar, M. Dudley
Journal of Applied Crystallography, 56 (5), 1610-1615 (2023)
https://doi.org/10.1107/S1600576723007926
2022
- Characterization of Prismatic Slip in PVT-Grown AlN Crystals
S. Hu, H. Fang, Y. Liu, H. Peng, Q. Cheng, Z. Chen, R. Dalmau, J. Britt, R. Schlesser, B. Raghothamachar, M. Dudley
Journal of Crystal Growth, 126548 (2022)
https://doi.org/10.1016/j.jcrysgro.2022.126548 - Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography
Y. Liu, Z. Chen, S. Hu, H. Peng, Q. Cheng, B. Raghothamachar, M. Dudley
Journal of Crystal Growth 583, 126559 (2022)
https://doi.org/10.1016/j.jcrysgro.2022.126559 - Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples
H. Peng, Y. Liu, Z. Chen, Q. Cheng, S. Hu, B. Raghothamachar, M Dudley, K. Sampayan, S. Sampayan
Journal of Crystal Growth 579, 126459 (2022)
https://doi.org/10.1016/j.jcrysgro.2021.126459 - Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography
H. Peng, Z. Chen, Y. Liu, Q. Cheng, S. Hu, X. Huang, L. Assoufid, B. Raghothamachar, M Dudley
Materials Science Forum 1062, 356-360 (2022)
https://doi.org/10.4028/p-u7m9jr - Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms
Z. Chen, H. Peng, Y. Liu, Q. Cheng, S. Hu, B. Raghothamachar, M Dudley
Materials Science Forum 1062, 361-365 (2022)
https://doi.org/10.4028/p-m7sftq - Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials
Y. Liu, H. Peng, Z. Chen, Q. Cheng, S. Hu, B. Raghothamachar, M Dudley, R. Collazo, Z. Sitar, J. Tweedie, M. Bockowski, V. Meyers, F S. Shahedipour-Sandvik, B. Li, J. Han
Materials Science Forum 1062, 351-355 (2022)
https://doi.org/10.4028/p-dd26nr - Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers
Q. Cheng, H. Peng, S. Hu, Z. Chen, Y. Liu, B. Raghothamachar, M Dudley
Materials Science Forum 1062, 366-370 (2022)
https://doi.org/10.4028/p-2kzz01 - Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and Temperatures
S. A. Mancini, S. Jang, Z. Chen, D. Kim, J. Lynch, Y. Liu, B. Raghothamachar, M. Kang, A. Agarwal, N. Mahadik, R. Stahlbush, M. Dudley, W. Sung
IEEE International Reliability Physics Symposium, P62-1-P62-6 (2022)
https://doi.org/10.1109/IRPS48227.2022.9764538 - Quantitative analysis of dislocations in 4H-SiC wafers using synchrotron X-ray topography with ultra-high angular resolution
H. Peng, Z. Chen, Y. Liu, B. Raghothamachar, X. Huang, L. Assoufid, M Dudley
Journal of Applied Crystallography 55, 544-550 (2022)
https://doi.org/10.1107/S1600576722004046 - Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
Z. Chen, Y. Liu, H. Peng, Q. Cheng, S. Hu, B. Raghothamachar, M Dudley, R. Ghandi, S. Kennerly, P. Thieberger
ECS Journal of Solid State Science and Technology 11, 065003 (2022)
https://doi.org/10.1149/2162-8777/ac7351
2021
- Prismatic Slip in AlN Crystals Grown By PVT
S. Hu, H. Fang, Y. Liu, H. Peng, T. Ailihumaer, Q. Cheng, Z. Chen, R. Dalmau, J. Britt, R. Schlesser, B. Raghothamachar, M. Dudley
ECS Trans., 104 (7), 57-64, (2021).
https://doi.org/10.1149/10407.0057ecst - Microstructure Analysis of GaN Epitaxial Layers During Ion Implantation Using Synchrotron X-Ray Topography
Y. Liu, H. Peng, Z. Chen, T. Ailihumaer, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley
ECS Trans. 104 113 (2021).
https://doi.org/10.1149/10407.0113ecst - Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation
Z. Chen, Y. Liu, H. Peng, T. Ailihumaer, Q. Cheng, S. Hu, B. Raghothamachar, M. Dudley
ECS Trans. 104 75 (2021)
https://iopscience.iop.org/article/10.1149/10407.0075ecst/meta - Crystal Defect Investigation in PVT-Grown ZnSe Under Different Seeding Conditions and Growth Configurations Using Synchrotron X-Ray Topography
Q Cheng, Z Chen, H Peng, Y Liu, S Hu, B Raghothamachar, M Dudley
ECS Trans. 104 3 (2021).
https://doi.org/10.1149/10405.0003ecst - Investigation of Dislocations in 6H-SiC Axial Samples Using Synchrotron X-Ray Topography and Ray Tracing Simulation
H. Peng, Y. Liu, T. Ailihumaer, B Raghothamachar, M Dudley, K. Sampayan, S. Sampayan
ECS Trans. 104 147 (2021)
https://iopscience.iop.org/article/10.1149/10407.0147ecst/meta - Influence of Surface Relaxation on the Contrast of Threading Edge Dislocations in Synchrotron X-ray Topographs Under the Condition of g.b = 0 and g.bxl=0
H. Peng, T. Ailihumaer, F. Fujie, Z. Chen, B. Raghothamachar and M. Dudley
J. Appl. Cryst., 54, 439-443, (2021).
https://scripts.iucr.org/cgi-bin/paper?S160057672100025X - Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC
F.Fujie, H. Peng, T. Ailihumaer, B. Raghothamachar, M. Dudley, S. Harada, M. Tagawa, T. Ujihara
Acta Materialia, 208, 116746, (2021).
https://www.sciencedirect.com/science/article/pii/S1359645421001269 - X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices
Y. Liu, H. Peng, T. Ailihumaer, B. Raghothamachar, and M. Dudley
Journal of Electronic Materials, 50 (7), 2981–2989, (2021). https://link.springer.com/article/10.1007%2Fs11664-021-08762-6 - Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals
T. Ailihumaer, H. Peng, Y. Liu, B. Raghothamachar, M Dudley, G. Chung, I. Manning, and E. Sanchez
Journal of Electronic Materials, 50 (7), 3258–3265, (2021)
https://link.springer.com/article/10.1007/s11664-021-08827-6 - Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy
H. Peng, T. Ailihumaer, Y. Liu, K. Kisslinger, X. Tong, B. Raghothamachar, M Dudley
Journal of Electronic Materials, 50 (7), 3006–3012, (2021).
https://link.springer.com/article/10.1007%2Fs11664-021-08832-9 - Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations
Q. Cheng, T. Ailihumaer, Y. Liu, H. Peng, Z. Chen, B. Raghothamachar, and M. Dudley
Journal of Electronic Materials, 50 (7), 4104-4117, (2021).
https://link.springer.com/article/10.1007%2Fs11664-021-08888-7 - Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals
T. Ailihumaer, H. Peng, F. Fujie, B. Raghothamachar, M. Dudley, S. Harada, and T. Ujihara
Mater. Sci. and Engin., B 271, 115281, (2021).
https://www.sciencedirect.com/science/article/abs/pii/S0921510721002415?dgcid=rss_sd_all - Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices
Y. Liu, H. Peng, Z. Chen, T. Ailihuamaer, S. Hu, B. Raghothamachar and M. Dudley
MRS Advances 6 (17) 450–455 (2021).
https://link.springer.com/article/10.1557/s43580-021-00098-x - Dislocation contrast on X-ray topographs under weak diffraction conditions
H. Peng, T. Ailihumaer, Y. Liu, B. Raghothamachar, X. Huang, L. Assoufid, and M. Dudley
J. Appl. Cryst., 54, 1225-1233, (2021).
https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576721006592
2020
- Characterization of defects and strain in the (AlxGa (1− x)) 0.5 In0. 5P/GaAs system by synchrotron X-ray topography
H Peng, T Ailihumaer, Y Liu, B Raghothamachar, M Dudley
Journal of Crystal Growth 533, 125458
https://www.sciencedirect.com/science/article/pii/S0022024819306736 - Ray Tracing Simulation of Images of Dislocations and Inclusions on X Ray Topographs of GaAs Epitaxial Wafers
H Peng, T Ailihumaer, B Raghothamachar, M Dudley
Journal of Electronic Materials, 1-9
https://link.springer.com/article/10.1007/s11664-020-07981-7 - Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals
T Ailihumaer, H Peng, B Raghothamachar, M Dudley, G Chung, …
Journal of Electronic Materials, 1-10
https://link.springer.com/article/10.1007/s11664-019-07937-6 - The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
A.B. Renz, V.A. Shah, O.J. Vavasour, Y. Bonyadi, F. Li, T. Dai, G.W.C. Baker, S. Hindmarsh, Y. Han, M. Walker, Y. Sharma, Y. Liu, B. Raghothamachar, M. Dudley, P.A. Mawby, and P.M. Gammon
J. Appl. Phys., 127, 025704-1 – 025704-9, (2020).
https://doi.org/10.1063/1.5133739 - X-ray topography characterization of gallium nitride substrates for power device development
B. Raghothamachar, Y. Liu, H. Peng, T. Ailihumaer, F. Shadi Shahedipour-Sandvik, K.A. Jones, A. Armstrong, A.A. Allerman, J. Han, H. Fu, K. Fu, and Y. Zhao
Journal of Crystal Growth, 544, 125709, (2020).
https://doi.org/10.1016/j.jcrysgro.2020.125709 - Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production
I. Manning, Y. Matsuda, G. Chung, E. Sanchez, M. Dudley, T. Ailihumaer, and B. Raghothamachar
Materials Science Forum, 1004, 37-43, (2020).
https://doi.org/10.4028/www.scientific.net/MSF.1004.37 - Investigation of Dislocation Behavior at the Early Stage of PVT-grown 4H-SiC Crystals
T. Ailihumaer, B. Raghothamachar, M. Dudley, G. Chung, I. Manning, and E. Sanchez
Materials Science Forum, 1004, 44-50, (2020).
https://doi.org/10.4028/www.scientific.net/MSF.1004.44 - X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates
Raf. Dalmau, J. Britt, H. Fang, B. Raghothamachar, M. Dudley and R. Schlesser
Materials Science Forum, 1004, 63-68, (2020).
https://doi.org/10.4028/www.scientific.net/MSF.1004.63 - Synchrotron X-ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers
T. Ailihumaer, H. Peng, B. Raghothamachar, M. Dudley, G. Chung, I. Manning, and E. Sanchez
Materials Science Forum, 1004, 393-400, (2020).
https://doi.org/10.4028/www.scientific.net/MSF.1004.393 - Synchrotron X-ray Topography Characterization of Commercial GaN Substrates for Power electronic Applications
Y. Liu, S. Hu, H. Peng, T. Ailihumaer, B. Raghothamachar and M. Dudley
ECS Trans., 98 (6), 21-34, (2020).
https://doi.org/10.1149/MA2020-02261808mtgabs - Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor Phase Epitaxy
H. Peng, T. Ailihumaer, Y. Liu, B. Raghothamachara and M. Dudley
ECS Trans., 98(6), 109-116, (2020).
https://doi.org/10.1149/09806.0109ecst - Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography
T. Ailihumaer, H. Peng, Y. Liu, B. Raghothamachar, and M. Dudley
ECS Trans., 98 (6), 125-132, (2020).
https://doi.org/10.1149/09806.0125ecst - Analysis of Dislocations in PVT-Grown 6H-SiC through Grazing-Incidence X-Ray Topographic Images and Ray-Tracing Simulation
Q. Cheng, T. Ailihumaer, H. Peng, Y. Liu, B. Raghothamachar, and M. Dudley
ECS Trans., 98 (6), 133-145, (2020).
https://doi.org/10.1149/09806.0133ecst - Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates
Y. Liu, B. Raghothamachar, H. Peng, T. Ailihumaer, M. Dudley……
J. Cryst. Growth 551, 125903, (2020)
https://doi.org/10.1016/j.jcrysgro.2020.125903.
2019
- Analysis of Basal Plane Dislocation Dynamics in PVT-Grown 4H-SiC Crystals during High Temperature Treatment
B Raghothamachar, Y Yang, J Guo, M Dudley
ECS Transactions 92 (7), 131
https://iopscience.iop.org/article/10.1149/09207.0131ecst/meta - Relationship between Basal Plane Dislocation and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals
T Ailihumaer, B Raghothamachar, M Dudley
ECS Transactions 92 (7), 123-130
https://ecs.confex.com/ecs/236/meetingapp.cgi/Paper/127571 - Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals
T Ailihumaer, Y Yang, J Guo, B Raghothamachar, M Dudley
Journal of Electronic Materials 48 (5), 3363-3369
https://link.springer.com/article/10.1007/s11664-019-07077-x - X-Ray Topography
B Raghothamachar, M Dudley
https://dl.asminternational.org/handbooks/book/100/chapter-abstract/2122224/X-Ray-Topography?redirectedFrom=fulltext - Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
B Raghothamachar, Y Yang, JQ Guo, M Dudley
Materials Science Forum 963, 268-271
https://www.scientific.net/MSF.963.268 - Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method
T Ailihumaer, Y Yang, JQ Guo, B Raghothamachar, M Dudley
Materials Science Forum 963, 336-340
https://www.scientific.net/MSF.963.336 - Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
I Manning, GY Chung, E Sanchez, M Dudley, T Ailihumaer, JQ Guo, …
Materials Science Forum 963, 60-63
https://www.scientific.net/MSF.963.60
2018
- Homoepitaxial HVPE GaN: A potential substrate for high performance devices
JA Freitas Jr, JC Culbertson, NA Mahadik, MJ Tadjer, S Wu, …
Journal of Crystal Growth 500, 104-110
https://www.sciencedirect.com/science/article/pii/S0022024818303646 - Gallium Nitride and Silicon Carbide Power Technologies 7
B Raghothamachar, K Shenai
Electrochemical Society
https://books.google.com/books?hl=en&lr=&id=hxFaDwAAQBAJ&oi=fnd&pg=PR2&ots=_M5L6LW-kM&sig=Oyqd4n0miR5Xxyj3r2_vQDgsHWY#v=onepage&q&f=false - In-Situ Synchrotron X-Ray Topography Study on the Stress Relaxation Process in 4H-SiC Homoepitaxial Layers
J Guo, T Ailihumaer, H Peng, B Raghothamachar, M Dudley
ECS Transactions 86 (12), 75
https://iopscience.iop.org/article/10.1149/08612.0075ecst/meta - Evaluation of Model for Determining Nitrogen Doping Concentration from Resultant Strain in Heavily Doped 4H-SiC Crystals
T Ailihumaer, Y Yang, J Guo, B Raghothamachar, M Dudley
ECS Transactions 86 (12), 53
https://iopscience.iop.org/article/10.1149/08612.0053ecst/meta - Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers
Y Yang, J Guo, OY Goue, JG Kim, B Raghothamachar, M Dudley, …
Journal of Electronic Materials 47 (2), 1218-1222
https://link.springer.com/article/10.1007/s11664-017-5863-4 - Characterization of strain due to nitrogen doping concentration variations in heavy doped 4H-SiC
Y Yang, J Guo, B Raghothamachar, X Chan, T Kim, M Dudley
Journal of Electronic Materials 47 (2), 938-943
https://link.springer.com/article/10.1007/s11664-017-5846-5 - Mapping of lattice strain in 4H-SiC crystals by synchrotron double-crystal x-ray topography
J Guo, Y Yang, B Raghothamachar, M Dudley, S Stoupin
Journal of Electronic Materials 47 (2), 903-909
https://link.springer.com/article/10.1007/s11664-017-5789-x - Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography
JQ Guo, Y Yang, B Raghothamachar, M Dudley, S Weit, AN Danilewsky, …
Materials Science Forum 924, 176-179
https://www.scientific.net/MSF.924.176 - In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers
Y Yang, JQ Guo, B Raghothamachar, M Dudley, S Weit, AN Danilewsky, …
Materials Science Forum 924, 172-175
https://www.scientific.net/MSF.924.172 - Automated Mapping of Micropipes in SiC Wafers Using Polarized-Light Microscope
S McGuire, R Blasi, P Wu, E Loukas, E Emorhokpor, S Dimov, XP Xu, …
Materials Science Forum 924, 527-530
https://www.scientific.net/MSF.924.527 - Optimization of 150 mm 4H SiC substrate crystal quality
I Manning, GY Chung, E Sanchez, Y Yang, JQ Guo, O Goue, …
Materials Science Forum 924, 11-14
https://www.scientific.net/MSF.924.11 - High quality AlN single crystal substrates for AlGaN-based devices
R Dalmau, HS Craft, J Britt, E Paisley, B Moody, JQ Guo, YJ Ji, …
Materials Science Forum 924, 923-926
https://www.scientific.net/MSF.924.923
2017
- Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial
J Guo, Y Yang, B Raghothamachar, T Kim, M Dudley, J Kim
Journal of Crystal Growth 480, 119-125
https://www.sciencedirect.com/science/article/pii/S0022024817306164 - General GaN & SiC Technologies
M Dudley, N Ohtani
232nd ECS Meeting (October 1-5, 2017),
https://ecs.confex.com/ecs/232/meetingapp.cgi/Session/16960 - Evaluation of Hvpe GaN Layers Grown on Ammonothermal GaN Substrates By Synchrotron X-Ray Topography
S Wu, B Raghothamachar, M Dudley, JA Freitas, T Sochacki, …
Meeting Abstracts, 1331-1331
https://ecs.confex.com/ecs/232/meetingapp.cgi/Paper/106042 - Estimation of Lattice Strain in 4H-SiC Commercial Wafer by Synchrotron Monochromatic X-ray Topographic Contour Mapping
J Guo, Y Yang, B Raghothamachar, M Dudley
ECS Transactions 80 (7), 245-250
https://iopscience.iop.org/article/10.1149/08007.0245ecst/meta - Studies on Doping Concentration Variations in 4H-SiC Substrates Using X-ray Contour Mapping
Y Yang, J Guo, B Raghothamachar, X Chan, T Kim, M Dudley
ECS Transactions 80 (7), 275-283
https://iopscience.iop.org/article/10.1149/08007.0275ecst/meta - Prismatic Slip in PVT-Grown 4H-SiC Crystals
J Guo, Y Yang, B Raghothamachar, J Kim, M Dudley, G Chung, …
Journal of Electronic Materials 46 (4), 2040-2044
https://link.springer.com/article/10.1007/s11664-016-5118-9 - Resolving the discrepancy between observed and calculated penetration depths in grazing incidence X-ray topography of 4H-SiC wafers
Y Yang, JQ Guo, B Raghothamachar, M Dudley, GY Chung, E Sanchez, …
Materials Science Forum 897, 209-213
https://www.scientific.net/MSF.897.209
2016
- Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers
Yu Yang, Jianqiu Guo, Ouloide Goue, Balaji Raghothamachar, Michael Dudley, Gil Chung, Edward Sanchez, Jeff Quast, Ian Manning, Darren Hansen
Journal of Crystal Growth
https://www.sciencedirect.com/science/article/pii/S0022024816000348 - Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method
Jianqiu Guo, Yu Yang, Fangzhen Wu, Joe Sumakeris, Robert Leonard, Ouloide Goue, Balaji Raghothamachar, Michael Dudley
Journal of Crystal Growth
https://www.sciencedirect.com/science/article/pii/S0022024815007472 - Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method
Jianqiu Guo, Yu Yang, Ouloide Yannick Goue, Balaji Raghothamachar, Michael Dudley
The Electrochemical Society
https://iopscience.iop.org/article/10.1149/07512.0163ecst/meta - Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography
Ouloide Yannick Goue, Jianqiu Guo, Yu Yang, Balaji Raghothamachar, Michael Dudley
IOP Publishing
https://iopscience.iop.org/article/10.1149/07512.0215ecst/meta - Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers
Yu Yang, Jianqiu Guo, Ouloide Yannick Goue, Balaji Raghothamachar, Michael Dudley, G Chung, E Sanchez, I Maning
ECS Transactions
https://iopscience.iop.org/article/10.1149/07512.0239ecst/meta - Projection x-ray topography system at 1-BM x-ray optics test beamline at the advanced photon source
Stanislav Stoupin, Balaji Raghothamachar, Michael Dudley, Zunping Liu, Emil Trakhtenberg, Keenan Lang, Kurt Goetze, Joseph Sullivan, Albert Macrander
AIP Conference Proceedings
https://aip.scitation.org/doi/abs/10.1063/1.4952938 - Synchrotron X-ray topography for encapsulation stress/strain and crack detection in crystalline silicon modules
Alessandra Colli, Klaus Attenkofer, Balaji Raghothamachar, Michael Dudley
IEEE Journal of Photovoltaics
https://ieeexplore.ieee.org/abstract/document/7513426/ - Studying the impact of stress/strain on cracks in laminated crystalline silicon cells: Opening the doors of synchrotron facilities to the PV module industry
Alessandra Colli, Klaus Attenkofer, Balaji Raghothamachar, Michael Dudley
IEEE
https://ieeexplore.ieee.org/abstract/document/7750128 - Effect of doping concentration variations in PVT-grown 4H-SiC wafers
Yu Yang, Jianqiu Guo, Ouloide Goue, Balaji Raghothamachar, Michael Dudley, Gil Chung, Edward Sanchez, Jeff Quast, Ian Manning, Darren Hansen
Journal of Electronic Materials
https://link.springer.com/article/10.1007/s11664-016-4378-8 - Direct determination of burgers vectors of threading mixed dislocations in 4H-SiC grown by PVT method
Jianqiu Guo, Yu Yang, Fangzhen Wu, Joe Sumakeris, Robert Leonard, Ouloide Goue, Balaji Raghothamachar, Michael Dudley
Journal of Electronic Materials
https://link.springer.com/article/10.1007/s11664-015-4317-0 - Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy
Ouloide Y Goue, Balaji Raghothamachar, Yu Yang, Jianqiu Guo, Michael Dudley, Kim Kisslinger, Andrew J Trunek, Philip G Neudeck, David J Spry, Andrew A Woodworth
https://link.springer.com/article/10.1007/s11664-015-4185-7 - Corrigendum to” Preparation, properties, and characterization of boron phosphide films on 4H-and 6H-silicon carbide”[Solid State Sci. 47 (2015) 55-60]
Balabalaji Padavala, CD Frye, Zihao Ding, Ruifen Chen, Michael Dudley, Balaji Raghothamachar, Neelam Khan, JH Edgar
Journal of Electronic Materials
https://www.sciencedirect.com/science/article/pii/S1293255816000133?via%3Dihub - Epitaxy of boron phosphide on aluminum nitride (0001)/sapphire substrate
Balabalaji Padavala, CD Frye, Xuejing Wang, Zihao Ding, Ruifen Chen, Michael Dudley, Balaji Raghothamachar, Peng Lu, BN Flanders, JH Edgar
Crystal Growth & Design
https://pubs.acs.org/doi/abs/10.1021/acs.cgd.5b01525 - Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
M Dudley, H Wang, Jianqiu Guo, Yu Yang, Balaji Raghothamachar, J Zhang, B Thomas, G Chung, EK Sanchez, D Hansen, SG Mueller
Materials Research Society
https://www.cambridge.org/core/journals/mrs-advances/article/current-status-of-the-quality-of-4hsic-substrates-and-epilayers-for-power-device-applications/22359F4FCAD785C3A52DEC963726CA2D - Using ray tracing simulations for direct determination of Burgers vectors of threading mixed dislocations in 4H-SiC c-plane wafers grown by PVT method
Jian Qiu Guo, Yu Yang, Fang Zhen Wu, Joseph J Sumakeris, RT Leonard, Ouloide Goue, Balaji Raghothamachar, Michael Dudley
Materials Science Forum
https://www.scientific.net/MSF.858.15 - Post-Growth Micropipe Formation in 4H-SiC
Jeffrey Quast, Michael Dudley, Jian Qiu Guo, Darren Hansen, Ian Manning, Stephan Mueller, Balaji Raghothamachar, Edward Sanchez, Clinton Whiteley, Yu Yang
Materials Science Forum
https://www.scientific.net/MSF.858.367 - Bulk growth of large area SiC crystals
Adrian R Powell, Joseph J Sumakeris, Yuri Khlebnikov, Michael J Paisley, RT Leonard, Eugene Deyneka, Sumit Gangwal, Jyothi Ambati, V Tsevtkov, Jeff Seaman, Andy McClure, Chris Horton, Olek Kramarenko, Varad Sakhalkar, M O’Loughlin, Albert A Burk, JQ Guo, Michael Dudley, Elif Balkas
Materials Science Forum
https://www.scientific.net/MSF.858.5 - Dislocation Characterization in 4H-SiC Crystals
Joseph J Sumakeris, RT Leonard, Eugene Deyneka, Yuri Khlebnikov, Adrian R Powell, Jeff Seaman, Michael J Paisley, V Tsevtkov, Jian Qiu Guo, Yu Yang, Michael Dudley, Elif Balkas
Materials Science Forum
https://www.scientific.net/MSF.858.393 - Mapping of Threading Screw Dislocations in 4H n-type SiC wafers
Alexandre Ellison, Erik Sörman, Björn Sundqvist, Björn Magnusson, Yu Yang, Jian Qiu Guo, Ouloide Goue, Balaji Raghothamachar, Michael Dudley
Materials Science Forum
https://www.scientific.net/MSF.858.376 - Synchrotron X-ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC wafers
Yu Yang, Jian Qiu Guo, Ouloide Goue, Balaji Raghothamachar, Michael Dudley, Gil Y Chung, Edward Sanchez, Jeffrey Quast, Ian Manning, Darren Hansen
Materials Science Forum
https://www.scientific.net/MSF.858.105 - 150 mm 4H-SiC substrate with low defect density
Yu Qiang Gao, Hong Yan Zhang, Yan Min Zong, Huan Huan Wang, Jian Qiu Guo, Balaji Raghothamachar, Michael Dudley, Xi Jie Wang
Materials Science Forum
https://www.scientific.net/MSF.858.41 - Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects using Synchrotron X-ray Topography
OY Goue, Yu Yang, JQ Guo, Balaji Raghothamachar, Michael Dudley, JL Hosteller, Rachael L Myers-Ward, Paul B Klein, D Kurt Gaskill
Materials Science Forum
https://www.scientific.net/MSF.858.297
2015
- Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method
J Guo, Y Yang, F Wu, OY Goue, B Raghothamachar, M Dudley
ECS Transactions 69 (11), 33
https://iopscience.iop.org/article/10.1149/06911.0033ecst/meta - Double Shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers
Y Yang, J Guo, OY Goue, H Wang, F Wu, B Raghothamachar, M Dudley, …
ECS Transactions 69 (11), 39-46
http://scholar.google.com/scholar?cluster=5167294629513648932&hl=en&oi=scholarr - Preparation, properties, and characterization of boron phosphide films on 4H-and 6H-silicon carbide
B Padavala, CD Frye, Z Ding, R Chen, M Dudley, B Raghothamachar, …
Solid State Sciences 47, 55-60
https://www.sciencedirect.com/science/article/pii/S1293255815000485 - Characterization of CdZnTe Single Crystals Grown Under Different Cadmium Overpressures
CH Su, OY Goue, B Raghothomachar, M Dudley
https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/20150019540.pdf - Assessment of Factors Controlling the X-ray Penetration Depth in Studies of 4H-SiC using Monochromatic and White Beam Synchrotron X-ray Topography in Reflection Geometry
Y Yang, J Guo, OY Goue, F Wu, B Raghothamachar, M Dudley
Meeting Abstracts, 1116-1116
http://scholar.google.com/scholar?cluster=4174085722742804790&hl=en&oi=scholarr - Characterization of V-shaped defects in 4H-SiC homoepitaxial layers
F Wu, H Wang, B Raghothamachar, M Dudley, G Chung, J Zhang, …
Journal of Electronic Materials 44 (5), 1293-1299
https://link.springer.com/article/10.1007/s11664-014-3536-0 - Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC
H Wang, M Dudley, F Wu, Y Yang, B Raghothamachar, J Zhang, G Chung, …
Journal of Electronic Materials 44 (5), 1268-1274
https://link.springer.com/article/10.1007/s11664-014-3497-3 - In-situ characterization of defect dynamics in 4H-SiC power diodes under high-voltage stressing
K Shenai, B Raghothamachar, M Dudley, A Christou
ECS Transactions 66 (1), 205-216
http://scholar.google.com/scholar?cluster=10414004912256568975&hl=en&oi=scholarr - Method and system for deterministic document quality assurance
N Evevsky, JE Bergeron, M Dudley
US Patent 8,929,686
https://patents.google.com/patent/US8929686B2/en - GaN & SiC Power Technologies 5
K Shenai, M Dudley, N Ohtani, M Bakowski
The Electrochemical Society
http://books.google.com/books?hl=en&lr=&id=bK1ZDwAAQBAJ&oi=fnd&pg=PR2&dq=info:bSt012lloL4J:scholar.google.com&ots=omRTxcdVMi&sig=h8CyQdZdLdqWcJBGVu2HSaSEpZM - High Quality 100 mm 4H-SiC Substrate
YQ Gao, HY Zhang, J Song, S Song, QR Liang, M Ning, C Gao, XJ Wang, …
Materials Science Forum 821, 51-55
https://www.scientific.net/msf.821-823.51 - Stacking fault formation via 2D nucleation in PVT grown 4H-SiC
FZ Wu, HH Wang, Y Yang, JQ Guo, B Raghothamachar, M Dudley, …
Materials Science Forum 821, 85-89
https://scholar.google.com/scholar?oi=bibs&cluster=5406722444876152588&btnI=1&hl=en - X-ray Topography Studies of Relaxation during the Homo-Epitaxy of 4H-SiC
H Wang, M Dudley, J Zhang, B Thomas, G Chung, EK Sanchez, …
MRS Online Proceedings Library Archive 1741
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/xray-topography-studies-of-relaxation-during-the-homoepitaxy-of-4hsic/479DD90FCE050DE2C0886CF6B15148D5
2014
- A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images
F Wu, H Wang, B Raghothamachar, M Dudley, SG Mueller, G Chung, …
Journal of Applied Physics 116 (16), 169901
https://aip.scitation.org/doi/full/10.1063/1.4899320 - Off-axis silicon carbide substrates
J Edgar, M Dudley, M Kuball, Y Zhang, G Wang, H Chen, Y Zhang
US Patent 8,823,014
https://patents.google.com/patent/US8823014B2/en - Synchrotron topography studies of the operation of double-ended Frank–Read partial dislocation sources in 4H-SiC
H Wang, F Wu, S Byrappa, B Raghothamachar, M Dudley, P Wu, …
Journal of crystal growth 401, 423-430
https://www.sciencedirect.com/science/article/pii/S0022024814001419 - Characterization of Defects in SiC Substrates and Epilayers
H Wang, F Wu, Y Yang, J Guo, B Raghothamachar, M Dudley, J Zhang, …
ECS Transactions 64 (7), 145-152
https://iopscience.iop.org/article/10.1149/06407.0145ecst/meta - Stacking Fault Formation during Homo-Epitaxy of 4H-SiC
H Wang, F Wu, Y Yang, J Guo, B Raghothamachar, M Dudley, J Zhang, …
ECS Transactions 64 (7), 125
https://iopscience.iop.org/article/10.1149/06407.0125ecst/meta - Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC
H Wang, F Wu, Y Yang, J Guo, B Raghothamachar, M Dudley, J Zhang, …
ECS Transactions 64 (7), 213-222
https://iopscience.iop.org/article/10.1149/06407.0213ecst/meta - Investigation of single crystal 4H-SiC growth by the Solvent–Laser Heated Floating Zone technique
AA Woodworth, PG Neudeck, A Sayir, F Solá, M Dudley, …
Journal of crystal growth 392, 34-40
https://www.sciencedirect.com/science/article/pii/S0022024814000803 - Characterization of threading dislocations in PVT-grown AlN substrates via X-ray topography and ray tracing simulation
T Zhou, B Raghothamachar, F Wu, R Dalmau, B Moody, S Craft, …
Journal of electronic materials 43 (4), 838-842
https://link.springer.com/article/10.1007/s11664-013-2968-2 - Crystal defects in wide bandgap semiconductors
K Shenai, A Christou, M Dudley, B Ragothamachar, R Singh
ECS Transactions 61 (4), 283
https://iopscience.iop.org/article/10.1149/06104.0283ecst/meta - Heteroepitaxial Growth of Boron Phosphide on 3C-SiC/Si (100) and AlN/Sapphire (0001) Substrates
B Padavala, C Frye, JH Edgar, Z Ding, R Chen, M Dudley, …
Mater. Sci. Technol, 1583-1590
https://www.researchgate.net/profile/Balabalaji_Padavala/publication/287634341_Heteroepitaxial_growth_of_boron_phosphide_on_3C-SiCSi100_and_AlNsapphire0001_substrates/links/5679da5608ae7fea2e98af98.pdf - Effect of doping on crystalline quality of rubidium titanyl phosphate (RTP) crystals grown by the TSSG method
J Guo, B Raghothamachar, M Dudley, JJ Carvajal, A Butt, MC Pujol, …
MRS Online Proceedings Library Archive 1698
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/effect-of-doping-on-crystalline-quality-of-rubidium-titanyl-phosphate-rtp-crystals-grown-by-the-tssg-method/5B712D94484F715F02D6A4745CF1FF27 - Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+ a in PVT Grown 4H-SiC
F Wu, H Wang, B Raghothamachar, M Dudley, SG Mueller, G Chung, …
MRS Online Proceedings Library Archive 1693
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/direct-observation-of-stacking-fault-nucleation-from-deflected-threading-dislocations-with-burgers-vector-ca-in-pvt-grown-4hsic/A2E82D97FACD78B0476E1E2505268FE6 - Defect reduction paths in SiC Epitaxy
J Zhang, DM Hansen, VM Torres, B Thomas, G Chung, H Makoto, …
MRS Online Proceedings Library Archive 1693
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/defect-reduction-paths-in-sic-epitaxy/564B1396A8AAD68D51612A200609CC93 - Structural Characterization of Lateral-grown 6H-SiC a/m-plane Seed Crystals by Hot Wall CVD Epitaxy
OY Goue, B Raghothamachar, M Dudley, AJ Trunek, PG Neudeck, …
MRS Online Proceedings Library Archive 1693
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/structural-characterization-of-lateralgrown-6hsic-amplane-seed-crystals-by-hot-wall-cvd-epitaxy/0943B18F940594BA05D757AEFB6F74CA - Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-ray Topography
HH Wang, FZ Wu, M Dudley, B Raghothamachar, GY Chung, J Zhang, …
Materials Science Forum 778, 328-331
https://www.scientific.net/MSF.778-780.328 - Study of V and Y shape Frank-type Stacking Faults Formation in 4H-SiC epilayer
HH Wang, FZ Wu, SY Byrapa, Y Yang, B Raghothamachar, M Dudley, …
Materials Science Forum 778, 332-337
https://www.scientific.net/MSF.778-780.332
2013
- Influence of Surface Preparation of Bar-shaped Crystals on Detectors Performance
G Camarda, AE Bolotnikov, T Chan, Y Cui, M Dudley, A Hossain, KH Kim, K Lee, B Raghothamachar, U Roy, G Yang, RB James
BNL-102111-2013-CP
https://www.bnl.gov/isd/documents/82845.pdf - Rugged electrical power switching in semiconductors: A systems approach
Krishna Shenai, Michael Dudley, Robert F Davis
Proceedings of the IEEE
https://ieeexplore.ieee.org/abstract/document/6595555 - Synchrotron X-Ray Topography Studies of the Evolution of the Defect Microstructure in Physical Vapor Transport Grown 4H-SiC Single Crystals
Michael Dudley, Balaji Raghothamachar, Huanhuan Wang, Fangzhen Wu, Shayan Byrappa, Gil Chung, Edward K Sanchez, Stephan Mueller, Darren Hansen, Mark Loboda
ECS Transactions
https://iopscience.iop.org/article/10.1149/05804.0315ecst/meta - Quantitative comparison between dislocation densities in offcut 4H-SiC wafers measured using synchrotron X-ray topography and molten KOH etching
Huanhuan Wang, Shun Sun, Michael Dudley, Shayan Byrappa, Fangzhen Wu, Balaji Raghothamachar, Gil Chung, Edward K Sanchez, Stephan G Mueller, Darren Hansen, Mark J Loboda
Journal of electronic materials
https://link.springer.com/article/10.1007/s11664-013-2527-x - Characterization and formation mechanism of six pointed star-type stacking faults in 4H-SiC
Fangzhen Wu, Huanhuan Wang, Shayan Byrappa, Balaji Raghothamachar, Michael Dudley, Ping Wu, Xueping Xu, Ilya Zwieback
Journal of electronic materials
https://link.springer.com/article/10.1007/s11664-012-2379-9 - Gallium Nitride and Silicon Carbide Power Technologies 4
M Dudley, M Bakowski, N Ohtani
Electrochemical Society
https://books.google.com/books?hl=en&lr=&id=TfBdDwAAQBAJ&oi=fnd&pg=PR2&ots=V5gUvHOR9X&sig=XsLvgg4T345gHYj95g9nEFyih-Y#v=onepage&q&f=false - Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices
Krishna Shenai, Michael Dudley, Robert F Davis
ECS Journal of Solid State Science and Technology
https://iopscience.iop.org/article/10.1149/2.012308jss/meta - Grazing Incidence X-ray Topographic Studies of Threading Dislocations in Hydrothermal Grown ZnO Single Crystal Substrates
Tianyi Zhou, Balaji Raghothamachar, Fangzhen Wu, Michael Dudley
MRS Online Proceedings Library Archive
https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/grazing-incidence-xray-topographic-studies-of-threading-dislocations-in-hydrothermal-grown-zno-single-crystal-substrates/48A21749840A38B175FD87CA2B954506 - Defect generation mechanisms in PVT-grown AlN single crystal boules
Balaji Raghothamachar, Yu Yang, Rafael Dalmau, Baxter Moody, H Spalding Craft, Raoul Schlesser, Michael Dudley, Zlatko Sitar
Materials Science Forum
https://www.scientific.net/MSF.740-742.91 - The Nucleation and Propagation of Threading Dislocations with c-component of Burgers Vector in PVT-Grown 4H-SiC
Fang Zhen Wu, Michael Dudley, Huan Huan Wang, Shayan Byrappa, Shun Sun, Balaji Raghothamachar, Edward Sanchez, Gil Yong Chung, Darren M Hansen, Stephan G Mueller, Mark J Loboda
Materials Science Forum
https://www.scientific.net/MSF.740-742.217
Refers to Prof. Dudley’s Google Scholar page or CV for older publications