2021 Virtual MRS Spring Meeting and Exhibit
- Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices
Yafei Liu, Hongyu Peng, Tuerxun Ailihumaer, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley
63rd Electronic Materials Conference
- X-ray topography characterization of selective area doped GaN epilayers for power electronic devices development
Yafei Liu, Hongyu Peng, Tuerxun Ailihumaer, Qianyu Cheng, Zeyu Chen, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley - Characterization of Prismatic Slip in PVT-Grown AlN Crystals
Shanshan Hu, Haoyan Fang, Yafei Liu, Hongyu Peng, Tuerxun Ailihuamaer, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley - Analysis of Local Lattice Distortion of SiC in Weak Beam Topography
Hongyu Peng, Tuerxun Ailihumaer, Yafei Liu, Balaji Raghothamachar and Michael Dudley - Assessment of lattice damage in high energy ion implanted 4H-SiC wafers at room temperature
Zeyu Chen, Yafei Liu, Hongyu Peng, Tuerxun Ailihumaer, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley - Crystallographic and Defect Characterization of PVT-Grown ZnSe Under Different Growth Configurations
Q. Cheng, T. Ailihumaer, Y. Liu, H. Peng, Z. Chen, B. Raghothamachar, and M. Dudley
- Application of synchrotron X-ray rocking curve topography to GaN substrates and epitaxial layers used for power electronic devices
Yafei Liu, Tuerxun Ailihumaer, Zeyu Chen, Shanshan Hu, Hongyu Peng, Qianyu Cheng, Balaji Raghothamachar, and Michael Dudley - Prismatic Slip in PVT-Grown AlN Crystals
Shanshan Hu, Haoyan Fang, Yafei Liu, Hongyu Peng, Tuerxun Ailihuamaer, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley - Synchrotron X-ray topographic image of dislocations in 6H-SiC axial samples
Hongyu Peng, Tuerxun Ailihumaer, Yafei Liu, Balaji Raghotharmachar, and Michael Dudley - Dislocation Contrast on X-ray Topographs under Weak Diffraction Conditions
Hongyu Peng, Tuerxun Ailihumaer, Yafei Liu, Balaji Raghotharmachar, Xianrong Huang, Lahsen Assoufid and Michael Dudley - Characterization of Lattice Damage in High Energy Ion Implanted 4H-SiC Wafers at Room Temperature
Zeyu Chen, Yafei Liu, Hongyu Peng, Tuerxun Ailihumaer, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, Michael Dudley - Structural Defects Characterization of PVT-Grown 6H-SiC Crystal Using Synchrotron X-Ray Topography and Ray-Tracing Simulations
Q. Cheng, T. Ailihumaer, H. Peng, Y. Liu, B. Raghothamachar, and M. Dudley - X-Ray Characterization of Defect Structures in PVT-Grown ZnSe Crystals with Different Seeding Conditions and Growth Configurations
Q. Cheng, Z. Chen, B. Raghothamachar, and M. Dudley
- Microstructure analysis of GaN epitaxial layers during ion implantation using synchrotron X-ray topography
Yafei Liu, Hongyu Peng, Zeyu Chen, Tuerxun Ailihumaer, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley - Prismatic Slip in PVT-Grown AlN Crystals
Shanshan Hu, Haoyan Fang, Yafei Liu, Hongyu Peng, Tuerxun Ailihuamaer, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley - Investigation of Dislocations in 6H-SiC Axial Samples Using Synchrotron X-ray Topography and Ray Tracing Simulations
Hongyu Peng, Yafei Liu, Zeyu Chen, Qianyu Cheng, Shanshan Hu, Balaji Raghotharmachar, and Michael Dudley - Characterization of 4H-SiC Lattice Damage after Novel High Energy Ion Implantation
Zeyu Chen, Yafei Liu, Hongyu Peng, Tuerxun Ailihumaer, Qianyu Cheng, Balaji Raghothamachar, Michael Dudley - Crystal Defect Investigation in PVT-Grown ZnSe Under Different Seeding Conditions and Growth Configurations Using Synchrotron X-Ray Topography
Q. Cheng, Z. Chen, H. Peng, Y. Liu, S. Hu, B. Raghothamachar, and M. Dudley
13th European Conference on Silicon Carbide and Related Materials
- Synchrotron X-ray topography characterization of power electronic GaN materials (poster)
Yafei Liu, Hongyu Peng, Zeyu Chen, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar, and Michael Dudley - Prismatic Slip in PVT-Grown AlN Crystals (poster)
Shanshan Hu, Yafei Liu, Hongyu Peng, Qianyu Cheng, Zeyu Chen, Balaji Raghothamachar, Michael Dudley - Dislocation contrast analysis in synchrotron X-ray topography
Hongyu Peng, Zeyu Chen, Yafei Liu, Qianyu Cheng, Shanshan Hu, Balaji Raghothamachar and Michael Dudley - Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers
Q. Cheng, H. Peng, S. Hu, Z. Chen, Y. Liu, B. Raghothamachar, and M. Dudley - Dislocation Contrast Analysis on PVT-grown 4H-SiC through Synchrotron Grazing-incidence X-Ray Topographs and Ray-Tracing Simulation with Consideration of Surface Relaxation and X-Ray Absorption (poster)
Q. Cheng, T. Ailihumaer, H. Peng, Y. Liu, Z. Chen, S. Hu, B. Raghothamachar, and M. Dudley